NoMIS Power Joins ARPA-E DC-GRIDS Consortium, Supplying 3.3 kV SiC MOSFETs for High-Voltage HVDC Submodules

NoMIS to lead SiC device-level packaging and supply 3.3 kV SiC MOSFETs including its upcoming 25 mΩ device. The 3.3 kV portfolio is also available to other DC-GRIDS teams. ALBANY, N.Y., May 15, 2026 /PRNewswire/ -- NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power...